Результаты поиска 2N6668
Найдено 7 результатов.
- Central Semiconductor — Small Signal Transistors PNP Pwr Darlington
- ON Semiconductor — Transistors Bipolar - Darlington 10A 80V Bipolar
- STMicroelectronics — TRANS DARL PNP 80V 10A TO-220
- ON Semiconductor — Transistors Bipolar - Darlington 10A 80V Bipolar Power PNP
- Hi-Sincerity Microelectronics — PNP EPITAXIAL PLANAR TRANSISTOR
- ON Semiconductor — ON Semiconductor 2N6668BD Mfr Package Description: TO-220AB, 3 PIN Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Finish: TIN LEAD Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 2 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 100 Collector Current-Max (IC): 10 A Collector-emitter Voltage-Max: 80 V
- ON Semiconductor — ON Semiconductor 2N6668AK Mfr Package Description: TO-220AB, 3 PIN Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Finish: TIN LEAD Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 2 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 100 Collector Current-Max (IC): 10 A Collector-emitter Voltage-Max: 80 V