Результаты поиска 2117-V

Найдено 13 результатов.

• 2117-V
  J.W.Miller Magnetics — J.W.Miller Magnetics 2117-V Applications: Power Supplies Current: 1.8A Current - Saturation: - Current - Temperature Rise: - Dc Resistance (dcr): 210 mOhm Max Frequency - Test: 1kHz Inductance: 270ВµH Mounting Type: Through Hole Operating Temperature: -55В°C ~ 105В°C Package / Case: Radial Q @ Freq: - Self Resonant Freq: - Series: 2100 Shielding: - Tolerance: В±15% Type: Toroidal Other Names: M9873
• NJM2117V
  NJR (New Japan Radio) —
• NJM2117V
  NJR (New Japan Radio) —
• 2117-V-RC
  Bourns — Bourns 2117-V-RC Dc Current Rating: 1.8A Dc Resistance Max: 0.21ohm Dimensions: 8.382 mm W x 19.304 mm L x 11.43 mm H ID_COMPONENTS: 4656983 Inductance: 270µH Inductance Tolerance: ± 15% Inductor Case Style: Radial Leaded Lead Spacing: 8.382mm Maximum Dc Current: 1.8 Amps Maximum Dc Resistance: 0.21 Ohms No. Of Pins: 2 Series: 2100 Termination Style: Radial Tolerance: 15 %
• MACH211-7VC
  LATTICE [Lattice Semiconductor] — High-Performance EE CMOS Programmable Logic
• NJM2117V-TE1
  NJR — Amplifiers - Audio RF Amp for CD Plyr
• DF2117VT20V
  Renesas Electronics — Renesas Electronics DF2117VT20V Connectivity: FIFO, IВІC, LPC, SCI, SmartCard Core Processor: H8S/2600 Core Size: 16-Bit Data Converters: A/D 16x10b Eeprom Size: - Number Of I /o: 112 Operating Temperature: -20В°C ~ 75В°C Oscillator Type: External Package / Case: 144-TQFP, 144-VQFP Peripherals: POR, PWM, WDT Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH Ram Size: 8K x 8 Series: H8В® H8S/2100 Speed: 20MHz Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• ES-2117V-VEAE
  ADVANTECH [Advantech Co., Ltd.] — 17 Open Frame and Rugged Panel Mount Monitor
• DF2117VLP20V
  Renesas Electronics — Renesas Electronics DF2117VLP20V Connectivity: FIFO, IВІC, LPC, SCI, SmartCard Core Processor: H8S/2600 Core Size: 16-Bit Data Converters: A/D 16x10b Eeprom Size: - Number Of I /o: 112 Operating Temperature: -20В°C ~ 75В°C Oscillator Type: External Package / Case: 145-TFLGA Peripherals: POR, PWM, WDT Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH Ram Size: 8K x 8 Series: H8В® H8S/2100 Speed: 20MHz Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• DF2117VBG20V
  Renesas Electronics — Renesas Electronics DF2117VBG20V Connectivity: FIFO, IВІC, LPC, SCI, SmartCard Core Processor: H8S/2600 Core Size: 16-Bit Data Bus Width: 16|32 Bit Data Converters: A/D 16x10b Eeprom Size: - Family Name: H8S Interface Type: I2C/SCI Maximum Speed: 20 MHz Number Of I /o: 128 Number Of Programmable I/os: 128 Number Of Timers: 10 On-chip Adc: 16-chx10-bit Operating Supply Voltage: 3.3 V Operating Temperature: -20В°C ~ 75В°C Oscillator Type: External Package: 176LFBGA Package / Case: 176-LFBGA Peripherals: POR, PWM, WDT Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH Ram Size: 8K x 8 Series: H8В® H8S/2100 Speed: 20MHz Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V