Результаты поиска STW13N95K3

Найдено 3 результатов.

  • STMicroelectronics — STMicroelectronics STW13N95K3 Configuration: Single Continuous Drain Current: 10 A Current - Continuous Drain (id) @ 25В° C: 10A Drain To Source Voltage (vdss): 950V Drain-source Breakdown Voltage: 950 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 51nC @ 10V Gate Charge Qg: 51 nC Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 1620pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 (Straight Leads) Power - Max: 190W Power Dissipation: 190 W Rds On (max) @ Id, Vgs: 850 mOhm @ 5A, 10V Resistance Drain-source Rds (on): 0.68 Ohms Series: SuperMESH3в„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 100ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 950 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.68 Ohms Other Names: 497-10772-5
  • STMicroelectronics — STMicroelectronics STW13N95K3 Configuration: Single Continuous Drain Current: 10 A Current - Continuous Drain (id) @ 25В° C: 10A Drain To Source Voltage (vdss): 950V Drain-source Breakdown Voltage: 950 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 51nC @ 10V Gate Charge Qg: 51 nC Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 1620pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 (Straight Leads) Power - Max: 190W Power Dissipation: 190 W Rds On (max) @ Id, Vgs: 850 mOhm @ 5A, 10V Resistance Drain-source Rds (on): 0.68 Ohms Series: SuperMESH3в„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 100ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 950 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.68 Ohms Other Names: 497-10772-5
  • STMicroelectronics — STMicroelectronics STW13N95K3 Configuration: Single Continuous Drain Current: 10 A Current - Continuous Drain (id) @ 25В° C: 10A Drain To Source Voltage (vdss): 950V Drain-source Breakdown Voltage: 950 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 51nC @ 10V Gate Charge Qg: 51 nC Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 1620pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 (Straight Leads) Power - Max: 190W Power Dissipation: 190 W Rds On (max) @ Id, Vgs: 850 mOhm @ 5A, 10V Resistance Drain-source Rds (on): 0.68 Ohms Series: SuperMESH3в„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 100ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 950 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.68 Ohms Other Names: 497-10772-5




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Диоды, светодиоды. Оперативные поставки. Огромный ассортимент. Низкие цены.