Результаты поиска SIHD7N60E-GE3

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• SIHD7N60E-GE3
  Siliconix — Siliconix SIHD7N60E-GE3 Configuration: Single Continuous Drain Current: 7 A Drain-source Breakdown Voltage: 600 V Fall Time: 28 ns Forward Transconductance Gfs (max / Min): 1.9 S Gate Charge Qg: 40 nC Gate-source Breakdown Voltage: 4 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DPAK (TO-252) Power Dissipation: 78 W Product Category: MOSFET Resistance Drain-source Rds (on): 600 mOhms at 10 V Rise Time: 26 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 48 ns