Результаты поиска SIA533EDJ-T1-GE3
Найдено 1 результатов.
- Siliconix — Siliconix SIA533EDJ-T1-GE3 RoHS: yes Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: +/- 4.5 A, - 3.7 A Resistance Drain-Source RDS (on): 0.028 Ohms, 0.048 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PowerPAK SC-70-6 Forward Transconductance gFS (Max / Min): 11 S, 21 S Gate Charge Qg: 10 nC, 13 nC Minimum Operating Temperature: - 55 C Power Dissipation: 7.8 W Part # Aliases: SIA533EDJ-GE3