Результаты поиска SIA519EDJ-T1-GE3

Найдено 2 результатов.

• SIA519EDJ-T1-GE3
  Siliconix — Vishay Intertechnology SIA519EDJ-T1-GE3 Channel Type: Dual N & P Channel Drain-to-Source Voltage [Vdss]: 20 V Drain-Source On Resistance-Max: 40 mО© Qg Gate Charge: 7.7 / 12 nC Rated Power Dissipation: 7.8 W
• SIA519EDJ-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SIA519EDJ-T1-GE3 Channel Type: Dual N & P Channel Drain-to-Source Voltage [Vdss]: 20 V Drain-Source On Resistance-Max: 40 mО© Qg Gate Charge: 7.7 / 12 nC Rated Power Dissipation: 7.8 W