Результаты поиска SI4431BDY-T1-E3

Найдено 3 результатов.

• SI4431BDY-T1-E3
  Vishay/Siliconix — P-Channel MOSFETs 30V (D-S) 7.5A
• SI4431BDYT1E3
  Vishay Semiconductors — Vishay Semiconductors SI4431BDYT1E3 Date_code: 10+ Quantity: 5197
• SI4431BDY-T1-E3/BKN
  Vishay Intertechnology — Vishay Intertechnology SI4431BDY-T1-E3/BKN Channel Type: P Current, Drain: –5.8 A Fall Time: 70 ns Gate Charge, Total: 20 nC Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Operating And Storage Temperature: –55 to +150 В°C Package Type: SO-8 Polarization: P-Channel Power Dissipation: 1.5 W Resistance, Drain To Source On: 0.05 Ohm Temperature, Operating, Maximum: +150 В°C Temperature, Operating, Minimum: –55 В°C Thermal Resistance, Junction To Ambient: 50 В°C/W Time, Rise: 20 ns Time, Turn-off Delay: 110 ns Time, Turn-on Delay: 20 ns Transconductance, Forward: 18 S Voltage, Breakdown, Drain To Source: -30 V Voltage, Drain To Source: –30 V Voltage, Forward, Diode: –1.1 V Voltage, Gate To Source: В±20 V