Результаты поиска SI4412ADY-T1

Найдено 3 результатов.

• SI4412ADY-T1
  Vishay Intertechnology — Vishay Intertechnology SI4412ADY-T1 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 5.8 A Drain-source Breakdown Voltage: 30 V Gate-source Breakdown Voltage: +/- 20 V Lead Free Status / Rohs Status: No Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SO-8 Power Dissipation: 1.3 W Resistance Drain-source Rds (on): 0.035 Ohms Transistor Polarity: N-Channel Product Category: MOSFET Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 24 mOhms Fall Time: 6 ns Rise Time: 6 ns Factory Pack Quantity: 2500 Tradename: TrenchFET Typical Turn-Off Delay Time: 26 ns
• SI4412ADY-T1-E3
  Vishay/Siliconix — N-Channel MOSFETs 30V 8A 2.5W
• SI4412ADY-T1-GE3
  Siliconix — Siliconix SI4412ADY-T1-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 24 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SO-8 Minimum Operating Temperature: - 55 C Power Dissipation: 2.5 W Factory Pack Quantity: 2500 Part # Aliases: SI4412ADY-GE3