Результаты поиска PMN50XP,165

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  • NXP Semiconductors — NXP Semiconductors PMN50XP,165 Configuration: Single Quad Drain Continuous Drain Current: 4.8 A Current - Continuous Drain (id) @ 25?° C: 4.8A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 10nC @ 4.5V Gate-source Breakdown Voltage: 12 V ID_COMPONENTS: 1950646 Input Capacitance (ciss) @ Vds: 1020pF @ 20V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 2.2W Power Dissipation: 2200 mW Rds On (max) @ Id, Vgs: 60 mOhm @ 2.8A, 4.5V Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 950mV @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: - 20 V Gate-Source Breakdown Voltage: 12 V Resistance Drain-Source RDS (on): 0.06 Ohms Fall Time: 35 ns Rise Time: 7.5 ns Factory Pack Quantity: 10000 Typical Turn-Off Delay Time: 82 ns Part # Aliases: /T2 PMN50XP Other Names: 934058528165, PMN50XP /T2




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