Результаты поиска PHT6NQ10T

Найдено 4 результатов.

• PHT6NQ10T
  Philips Semiconductors —
• PHT6NQ10T
  NXP Semiconductors —
• PHT6NQ10T,135
  NXP Semiconductors — NXP Semiconductors PHT6NQ10T,135 Configuration: Single Dual Drain Continuous Drain Current: 3 A Current - Continuous Drain (id) @ 25В° C: 6.5A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 21nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951776 Input Capacitance (ciss) @ Vds: 633pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 8.3W Power Dissipation: 1800 mW Rds On (max) @ Id, Vgs: 90 mOhm @ 3A, 10V Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 90 mOhms Fall Time: 15 ns Rise Time: 15 ns Factory Pack Quantity: 4000 Typical Turn-Off Delay Time: 20 ns Part # Aliases: /T3 PHT6NQ10T Other Names: 934055876135, PHT6NQ10T /T3
• PHT6NQ10T /T3
  NXP Semiconductors — NXP Semiconductors PHT6NQ10T /T3 Configuration: Single Dual Drain Continuous Drain Current: 3 A Drain-source Breakdown Voltage: 100 V Factory Pack Quantity: 4000 Fall Time: 15 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Part # Aliases: PHT6NQ10T,135 Power Dissipation: 1800 mW Product Category: MOSFET Rise Time: 15 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 20 ns