Результаты поиска PDTD123ET,215
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- NXP Semiconductors — NXP Semiconductors PDTD123ET,215 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Emitter- Base Voltage Vebo: 10 V ID_COMPONENTS: 1947756 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-23 Peak Dc Collector Current: 500 mA Power Dissipation: 250 mW Transistor Polarity: NPN Typical Input Resistor: 2.2 KOhms Typical Resistor Ratio: 1 Product Category: Transistors Switching - Resistor Biased RoHS: yes DC Collector/Base Gain hfe Min: 40 Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 500 mA Emitter- Base Voltage VEBO: 10 V Factory Pack Quantity: 3000 Part # Aliases: PDTD123ET T/R Other Names: 934058977215::PDTD123ET T/R::PDTD123ET T/R