Результаты поиска PBSS5130PAP,115
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors PBSS5130PAP,115 Collector- Base Voltage Vcbo: - 30 V Collector- Emitter Voltage Vceo Max: - 30 V Collector-emitter Saturation Voltage: - 85 mV Configuration: Dual Continuous Collector Current: - 1 A Dc Collector/base Gain Hfe Min: 250 Dc Current Gain Hfe Max: 350 Emitter- Base Voltage Vebo: - 7 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: - 2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: PNP RoHS: yes Collector- Base Voltage VCBO: - 30 V Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 7 V Collector-Emitter Saturation Voltage: - 85 mV Maximum DC Collector Current: - 2 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 250 DC Current Gain hFE Max: 350
- NXP Semiconductors — NXP Semiconductors PBSS5130PAP,115 Collector- Base Voltage Vcbo: - 30 V Collector- Emitter Voltage Vceo Max: - 30 V Collector-emitter Saturation Voltage: - 85 mV Configuration: Dual Continuous Collector Current: - 1 A Dc Collector/base Gain Hfe Min: 250 Dc Current Gain Hfe Max: 350 Emitter- Base Voltage Vebo: - 7 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: - 2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: PNP RoHS: yes Collector- Base Voltage VCBO: - 30 V Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 7 V Collector-Emitter Saturation Voltage: - 85 mV Maximum DC Collector Current: - 2 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 250 DC Current Gain hFE Max: 350