Результаты поиска NGTB20N120IHRWG

Найдено 1 результатов.

• NGTB20N120IHRWG
  ON Semiconductor — ON Semiconductor NGTB20N120IHRWG RoHS: yes Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.1 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 40 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 384 W Maximum Operating Temperature: + 175 C Package / Case: TO-247 Brand: ON Semiconductor Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Factory Pack Quantity: 30