Результаты поиска NDS355AN

Найдено 7 результатов.

• NDS355AN
  Fairchild Semiconductor — MOSFETs SOT-23 N-CH LOGIC
• NDS355AN
  Fairchild Semiconductor — MOSFET N-CH 30V 1.7A SSOT3
• NDS355AN
  Fairchild Semiconductor — MOSFET N-CH 30V 1.7A SSOT3
• NDS355AN
  Fairchild Semiconductor — MOSFET N-CH 30V 1.7A SSOT3
• NDS355AN_Q
  Fairchild Semiconductor — Fairchild Semiconductor NDS355AN_Q Configuration: Single Continuous Drain Current: 1.7 A Drain-source Breakdown Voltage: 30 V Fall Time: 32 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SSOT-3 Power Dissipation: 0.5 W Product Category: MOSFET Resistance Drain-source Rds (on): 2 Ohms Rise Time: 32 ns Transistor Polarity: N-Channel Typical Turn-off Delay Time: 13 ns Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 2 Ohms Typical Turn-Off Delay Time: 13 ns
• NDS355AN_G
  Fairchild Semiconductor — Fairchild Semiconductor NDS355AN_G Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 30 V Drain-Source On Resistance-Max: 0.085 О© Qg Gate Charge: 5 nC Rated Power Dissipation: 0.46 W
• NDS355AN_NL
  Fairchild Semiconductor —