Результаты поиска IXFR64N50Q3

Найдено 2 результатов.

• IXFR64N50Q3
  IXYS — IXYS IXFR64N50Q3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 45 A Resistance Drain-Source RDS (on): 94 mOhms Configuration: Single Mounting Style: Through Hole Package / Case: ISOPLUS 247 Gate Charge Qg: 145 nC Power Dissipation: 500 W Rise Time: 250 ns
• IXFR64N50Q3
  IXYS — IXYS IXFR64N50Q3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 45 A Resistance Drain-Source RDS (on): 94 mOhms Configuration: Single Mounting Style: Through Hole Package / Case: ISOPLUS 247 Gate Charge Qg: 145 nC Power Dissipation: 500 W Rise Time: 250 ns