Результаты поиска IXFH15N100Q3
Найдено 2 результатов.
- IXYS — IXYS IXFH15N100Q3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 1000 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 15 A Resistance Drain-Source RDS (on): 1.05 Ohms Configuration: Single Mounting Style: Through Hole Package / Case: TO-247 Gate Charge Qg: 64 nC Power Dissipation: 690 W Rise Time: 250 ns
- IXYS — IXYS IXFH15N100Q3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 1000 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 15 A Resistance Drain-Source RDS (on): 1.05 Ohms Configuration: Single Mounting Style: Through Hole Package / Case: TO-247 Gate Charge Qg: 64 nC Power Dissipation: 690 W Rise Time: 250 ns