Результаты поиска HGTG20N60B3D

Найдено 4 результатов.

• HGTG20N60B3D
  Fairchild Semiconductor — IGBTs 600V IGBT UFS N-Channel
• HGTG20N60B3D
  Fairchild Semiconductor — IGBT N-CH UFS 600V 20A TO-247
• HGTG20N60B3D_Q
  Fairchild Semiconductor — Fairchild Semiconductor HGTG20N60B3D_Q Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 20 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 165 W Maximum Operating Temperature: + 150 C Package / Case: TO-247-3 Continuous Collector Current Ic Max: 40 A Minimum Operating Temperature: - 40 C Mounting Style: Through Hole
• HGTG20N60B3D_NL
  Fairchild Semiconductor — 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode