Результаты поиска BUK9518-55,127
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- NXP Semiconductors — NXP Semiconductors BUK9518-55,127 Current - Continuous Drain (id) @ 25В° C: 57A Drain To Source Voltage (vdss): 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 2600pF @ 25V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 125W Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 5V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 2V @ 1mA Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 10 V Continuous Drain Current: 57 A Resistance Drain-Source RDS (on): 0.018 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 50 ns Minimum Operating Temperature: - 55 C Power Dissipation: 125 W Rise Time: 80 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 100 ns Other Names: 934045210127, BUK9518-55