Результаты поиска BSS138N
Найдено 23 результатов.
- Infineon — Low Voltage MOSFETs - SOT23, 60V, 3.5Ohm, 0.23A
- Fairchild Semiconductor —
- Infineon Technologies —
- Infineon Technologies — MOSFET N-CH 60V 230MA SOT-23
- Infineon Technologies — MOSFET N-CH 60V 230MA SOT-23
- Infineon Technologies — Infineon Technologies BSS138NL6327 Mfr Package Description: ROHS COMPLIANT, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2300 A Feedback Cap-Max (Crss): 3.8 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 3.5 ohm
- Infineon Technologies —
- Infineon Technologies — Infineon Technologies BSS138NE6433 Mfr Package Description: GREEN, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2300 A Feedback Cap-Max (Crss): 3.8 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 3.5 ohm
- Infineon Technologies —
- Infineon Technologies —