Результаты поиска BSS126 H6906

Найдено 2 результатов.

  • Infineon Technologies — Infineon Technologies BSS126 H6906 Configuration: Single Continuous Drain Current: 0.021 A Drain-source Breakdown Voltage: 600 V Fall Time: 115 ns Forward Transconductance Gfs (max / Min): 0.017 S Gate Charge Qg: 1.4 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: PG-SOT23-3 Part # Aliases: BSS126H6906XT BSS126H6906XTSA1 SP000705716 Power Dissipation: 0.5 W Product Category: MOSFET Resistance Drain-source Rds (on): 700 Ohms Rise Time: 9.7 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 14 ns RoHS: yes Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 700 Ohms Forward Transconductance gFS (Max / Min): 0.017 S Typical Turn-Off Delay Time: 14 ns
  • Infineon Technologies — Infineon Technologies BSS126 H6906 Configuration: Single Continuous Drain Current: 0.021 A Drain-source Breakdown Voltage: 600 V Fall Time: 115 ns Forward Transconductance Gfs (max / Min): 0.017 S Gate Charge Qg: 1.4 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: PG-SOT23-3 Part # Aliases: BSS126H6906XT BSS126H6906XTSA1 SP000705716 Power Dissipation: 0.5 W Product Category: MOSFET Resistance Drain-source Rds (on): 700 Ohms Rise Time: 9.7 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 14 ns RoHS: yes Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 700 Ohms Forward Transconductance gFS (Max / Min): 0.017 S Typical Turn-Off Delay Time: 14 ns




Поставки электронных компонентов - Экспресс доставка с Digikey, Newark, Mouser. Низкие цены!
Экспресс доставка с Digikey, Newark, Mouser. Низкие цены!