Результаты поиска BSN20,215

Найдено 2 результатов.

• BSN20.215
  NXP Semiconductors —
• BSN20,215
  NXP Semiconductors — NXP Semiconductors BSN20,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.173 A Current - Continuous Drain (id) @ 25В° C: 173mA Drain Current (max): 173mA Drain Efficiency: Not Required% Drain To Source Voltage (vdss): 50V Drain-source Breakdown Voltage: 50 V Drain-source On-res: 15Ohm Drain-source On-volt: 50V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Frequency (max): Not RequiredMHz Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): В±20V ID_COMPONENTS: 1951762 Input Capacitance (ciss) @ Vds: 25pF @ 10V Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 830mW Power Dissipation: 830 mW Power Gain: Not RequireddB Rds On (max) @ Id, Vgs: 15 Ohm @ 100mA, 10V Resistance Drain-source Rds (on): 15 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 1V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 50 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 15000 mOhms Factory Pack Quantity: 3000 Part # Aliases: BSN20 T/R Other Names: 568-1658-2, 934012500215, BSN20 T/R