Результаты поиска BC846BPN,115

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• BC846BPN,115
  NXP Semiconductors — NXP Semiconductors BC846BPN,115 Collector- Emitter Voltage Vceo Max: 65 V Configuration: Dual Continuous Collector Current: 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 270 Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949880 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-6, SC-88, SOT-363 Power - Max: 300mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN/PNP Transistor Type: NPN, PNP Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA / 900mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 65V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 270 DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Other Names: 934063471115