Результаты поиска 2SA1930(Q,M)

Найдено 3 результатов.

• 2SA1930
  TOSHIBA — TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
• 2SA1930(Q,M)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SA1930(Q,M) Collector- Emitter Voltage Vceo Max: - 180 V Continuous Collector Current: - 2 A Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 200MHz Gain Bandwidth Product Ft: 200 MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-10R1A (TO-220 NIS) Power - Max: 2W Power Dissipation: 25W Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 180V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Emitter Voltage VCEO Max: - 180 V Emitter- Base Voltage VEBO: - 5 V Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 50 Maximum Power Dissipation: 25W Factory Pack Quantity: 50 Other Names: 2SA1930(Q,M), 2SA1930QM
• 2SA1930(Q,M)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SA1930(Q,M) Collector- Emitter Voltage Vceo Max: - 180 V Continuous Collector Current: - 2 A Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 200MHz Gain Bandwidth Product Ft: 200 MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-10R1A (TO-220 NIS) Power - Max: 2W Power Dissipation: 25W Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 180V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Emitter Voltage VCEO Max: - 180 V Emitter- Base Voltage VEBO: - 5 V Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 50 Maximum Power Dissipation: 25W Factory Pack Quantity: 50 Other Names: 2SA1930(Q,M), 2SA1930QM