Результаты поиска 1046112

Найдено 1 результатов.

• BLF1046,112
  NXP Semiconductors — NXP Semiconductors BLF1046,112 Application: UHF Channel Mode: Enhancement Channel Type: N Configuration: Single Continuous Drain Current: 4.5 A Current - Test: 300mA Current Rating: 4.5A Drain Efficiency (typ): 46(Min)% Drain Source Resistance (max): 300(Typ)@14Vmohm Drain Source Voltage (max): 65V Drain-source Breakdown Voltage: 65 V Forward Transconductance (typ): 2S Frequency: 960MHz Frequency (max): 1GHz Gain: 14dB Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 3738036 Input Capacitance (typ)@vds: 46@26VpF Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 200 C Minimum Operating Temperature: - 65 C Mode Of Operation: 1-Tone Class-AB/2-Tone Class-AB/CW Class-AB Mounting: Screw Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 200C Output Capacitance (typ)@vds: 37@26VpF Output Power (max): 45W Package / Case: SOT467C Package Type: LDMOST Pin Count: 3 Power - Output: 45W Power Gain (typ)@vds: 14(Min)@26VdB Product Type: RF MOSFET Power Resistance Drain-source Rds (on): 0.3 Ohms Reverse Capacitance (typ): 1.5@26VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 26V Vswr (max): 10 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 45 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.3 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF1046 Other Names: 568-2384, 934055384112, BLF1046