STH210N75F6-2 datasheet

Маркировка

STH210N75F6-2
Производитель

STMicroelectronics
Описание

STMicroelectronics STH210N75F6-2 Current - Continuous Drain (id) @ 25?° C: 180A Drain To Source Voltage (vdss): 75V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 171nC @ 10V Input Capacitance (ciss) @ Vds: 11800pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: TO-263-3, D??Pak (2 leads + Tab), TO-263AB Power - Max: 300W Rds On (max) @ Id, Vgs: 2.8 mOhm @ 90A, 10V Series: STripFET?„? DeepGATE?„? Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 180 A Resistance Drain-Source RDS (on): 2.8 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 300 W Other Names: 497-11251-2
Количество страниц

11 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

106,55 KB