STBV42D datasheet

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• Маркировка
  STBV42D
• Производитель
  STMicroelectronics
• Описание
  STMicroelectronics STBV42D Collector- Emitter Voltage Vceo Max: 700 V Configuration: Single Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 1mA Dc Collector/base Gain Hfe Min: 5 Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 400mA, 5V Frequency - Transition: - Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 1W Power Dissipation: 1 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 1.5V @ 250mA, 750mA Voltage - Collector Emitter Breakdown (max): 400V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Emitter Voltage VCEO Max: 700 V Maximum DC Collector Current: 2 A DC Collector/Base Gain hfe Min: 5 Maximum Power Dissipation: 1 W Other Names: 497-10876
• Количество страниц
  13 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  319,99 KB

STBV42D datasheet скачать

STBV42D datasheet