STMicroelectronics SD56120C Product Category: Transistors RF MOSFET Power RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 1 GHz Gain: 14 dB at 860 MHz Output Power: 100 W Drain-Source Breakdown Voltage: 72 V Continuous Drain Current: 14 A Gate-Source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Package / Case: M246 Mounting Style: SMD/SMT Power Dissipation: 217 W