RUM002N02T2L datasheet
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О ДАТАШИТЕ
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МаркировкаRUM002N02T2L
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Производитель
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ОписаниеRohm RUM002N02T2L Current - Continuous Drain (id) @ 25?° C: 200mA Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 25pF @ 10V Mounting Type: Surface Mount Package / Case: VMT3 Power - Max: 150mW Rds On (max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V Series: - Vgs(th) (max) @ Id: 1V @ 1mA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Continuous Drain Current: 200 mA Resistance Drain-Source RDS (on): 1.2 Ohms Mounting Style: SMD/SMT Fall Time: 10 ns Power Dissipation: 150 mW Rise Time: 10 ns Factory Pack Quantity: 8000 Typical Turn-Off Delay Time: 15 ns
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