IXXH100N60C3 datasheet

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• Маркировка
  IXXH100N60C3
• Производитель
  IXYS
• Описание
  IXYS IXXH100N60C3 Collector- Emitter Voltage Vceo Max: 600 V Collector-emitter Saturation Voltage: 2.2 V Continuous Collector Current At 25 C: 190 A Current - Collector (ic) (max): 190A Eoff, Typ, Tj = 125?°c, Igbt (mj): - Eoff, Typ, Tj = 150?°c, Igbt (mj): 1.4 Gate-emitter Leakage Current: 100 nA Ic110, Tc = 110?°c, Igbt, (a): 100 Ic25, Tc = 25?°c, Igbt, (a): 190 Ic90, Tc = 90?°c, Igbt, (a): - If, Tc = 110?°c, Diode (a): - If, Tc = 90?°c, Diode (a): - Igbt Type: PT Input Type: Standard Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Gate Emitter Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 (TO-247AD) Package Style: TO-247 Power - Max: 830W Power Dissipation: 830 W Rthjc, Max, Diode (k/w): - Rthjc, Max, Igbt (c/w): 0.18 Series: XPT?„?, GenX3?„? Tfi, Typ, Tj = 25?°c, Igbt, (ns): 75 Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 70A Vce(sat), Typ, Tj = 25?°c, Igbt (v): 2.2 Vces, (v): 600 Voltage - Collector Emitter Breakdown (max): 600V RoHS: yes Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.2 V Continuous Collector Current at 25 C: 190 A Gate-Emitter Leakage Current: 100 nA
• Количество страниц
  6 шт.
• Формат
  PDF

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• Размер файла
  189,33 KB

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IXXH100N60C3 datasheet