IXGN60N60C2 datasheet

Маркировка

IXGN60N60C2
Производитель

IXYS
Описание

IXYS IXGN60N60C2 Configuration: Single Current - Collector (ic) (max): 75A Current - Collector Cutoff (max): 650?µA Eoff, Typ, Tj=125?°c, Igbt, (mj): 1.2 Ic110, Tc=110?°c, Igbt, (a): 60 Ic25, Tc=25?°c, Igbt, (a): 75 Ic90, Tc=90?°c, Igbt, (a): - If, Tj=110?°c, Diode, (a): - Igbt Type: PT Input: Standard Input Capacitance (cies) @ Vce: 4.75nF @ 25V Mounting Type: Chassis Mount Ntc Thermistor: No Package / Case: SOT-227, miniBLOC Package Style: SOT-227B Power - Max: 480W Rthjc, Max, Diode, (??c/w): - Rthjc, Max, Igbt, (?°c/w): 0.26 Series: HiPerFAST?„? Tfi, Typ, Tj=25?°c, Igbt, (ns): 35 Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A Vce(sat), Max, Tj=25?°c, Igbt, (v): 2.5 Vces, (v): 600 Voltage - Collector Emitter Breakdown (max): 600V RoHS: yes Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: 20 V Maximum Operating Temperature: + 150 C Continuous Collector Current Ic Max: 100 A Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Factory Pack Quantity: 10
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