CSD01060E-TR datasheet

Маркировка

CSD01060E-TR
Производитель

CREE
Описание

CREE CSD01060E-TR Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (io): 2.2A Current - Reverse Leakage @ Vr: 100?µA @ 600V Diode Type: Silicon Carbide Schottky ID_COMPONENTS: 389337 Mounting Type: Surface Mount Package / Case: TO-252-2, DPak (2 Leads + Tab), TO-252AA, SC-63 Reverse Recovery Time (trr): 0ns Series: - Speed: No Recovery Time > 500mA (Io) Voltage - Dc Reverse (vr) (max): 600V Voltage - Forward (vf) (max) @ If: 1.8V @ 1A Alternative: CREE INC CSD01060E-TR,CREE INCORPORATED CSD01060E-TR,CRE CSD01060E-TR,CREE LTD CSD01060E-TR,CREE PWR CSD01060E-TR,DIGI-KEY/CREE CSD01060E-TR,CREE ASIA PACIFIC CSD01060E-TR,CREE INC (VA) CSD01060E-TR,Cree Research Inc CSD01060E-TR,Cree Asia-Pacific Ltd CSD01060E-TR,Cree Microwave CSD01060E-TR,Cree Inc. CSD01060E-TR Other Names: Q5167212
Количество страниц

2 шт.
Формат

PDF
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Размер файла

124,79 KB