24.01.2025
TISP4265H4BJR-S datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
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МаркировкаTISP4265H4BJR-S
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ПроизводительBourns
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ОписаниеBourns TISP4265H4BJR-S Breakover Current Ibo Max: 60 A Forward Voltage Drop: 3 V Mounting Style: SMD/SMT Off-state Leakage Current @ Vdrm Idrm: 0.005 mA Package / Case: DO-214AA Rated Repetitive Off-state Voltage Vdrm: 200 V Product Category: Sidacs RoHS: yes Breakover Voltage VBO: +/- 265 V Breakover Current IBO Max: +/- 800 mA Non Repetitive On-State Current: 55 A, 60 A Rated Repetitive Off-State Voltage VDRM: +/- 200 V Off-State Leakage Current @ VDRM IDRM: +/- 5 uA Holding Current (Ih Max): +/- 800 mA On-State Voltage: +/- 3 V Off-State Capacitance CO: 22 pF to 70 pF Maximum Operating Temperature: + 85 C Current Rating: +/- 5 A Minimum Operating Temperature: - 40 C Operating Junction Temperature: - 40 C to + 150 C Factory Pack Quantity: 3000
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Количество страниц11 шт.
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ФорматPDF
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Размер файла245,27 KB
TISP4265H4BJR-S datasheet скачать
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